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Gallium arsenide and related compounds 1986 proceedings of the Thirteenth International Symposium on Gallium Arsenide and Related Compounds held in Las Vegas, Nevada, 28 September-1 October 1986 by International Symposium on Gallium Arsenide and Related Compounds (13th 1986 Las Vegas)

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Published by Institute of Physics in Bristol .
Written in English


  • Gallium arsenide semiconductors.

Book details:

Edition Notes

Includes bibliographies and index.

Statementedited by W.T. Lindley.
SeriesInstitute of Physics conference series -- no.83., Institute of Physics conference series -- no. 83.
ContributionsLindley, W. T.
LC ClassificationsQC611.8.G4
The Physical Object
Paginationxvi, 594 p. :
Number of Pages594
ID Numbers
Open LibraryOL17917868M
ISBN 100854981764
LC Control Number87014653

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Gallium Arsenide presents 63 important papers given at the second international conference on the Physics and Technology of GaAs and other III-V Compounds, held in Budapest, Hungary, Sept. The wealth of new information presented at the conference focussed on the following research areas. For gallium arsenide (GaAs) and related compounds, the MOVPE and MBE techniques are in widespread use. MOVPE is also important for the growth of wide-band gap semiconductors such as gallium nitride (GaN) and silicon carbide (SIC), whereas molecular beam epitaxy (MBE) is more important for silicon-germanium (SGe). COVID Resources. Reliable information about the coronavirus (COVID) is available from the World Health Organization (current situation, international travel).Numerous and frequently-updated resource results are available from this ’s WebJunction has pulled together information and resources to assist library staff as they consider how to handle coronavirus. Gallium arsenide is a compound semiconductor with a combination of physical properties that has made it an attractive candidate for many electronic applications. From a comparison of various physical and electronic properties of GaAs with those of Si (Table \(\PageIndex{3}\)) the advantages of GaAs over Si can be readily ascertained.

International Symposium on Gallium Arsenide and Related Compounds (10th: Albuquerque). Gallium arsenide and related compounds Bristol: Institute of Physics, © (OCoLC) Material Type: Conference publication: Document Type: Book: All Authors / Contributors: G E Stillman. Arsine gas may be produced from GaAs contacting strong oxidizers, acids. Webb et al, , Arsenic trioxide may be released from gallium arsenide after absorption. ACGIH TLV documentation states absorption via inhalation is more efficient than ingestion. Overview. GaAs toxicity may be due to arsenic and gallium. Gallium Arsenide (GaAs) Doping. This article briefly explains the compound semiconductor Gallium Arsenide (GaAs) with a figure showing the arrangement of atoms. The Gallium Arsenide (GaAs) doping process, with respect to the p-type and n-type material is also explained with diagrams.   Gallium arsenide has a similar crystal structure to silicon, but each atom of gallium has an arsenic atom nearest neighbor and vice versa. These materials are the core, along with the compound indium phosphide and its derived compounds (which are mostly used in telecommunications), of semiconductor lasers, which are also sometimes called.

gallium nitride, GaN, gallium arsenide, GaAs, and indium gallium arsenide phosphide, InGaAsP—that have valuable semiconductor and optoelectronic properties. Some of these compounds are used in solid-state devices such as transistors and rectifiers, and some form the basis for light-emitting diodes and semiconductor lasers. It is also used as a substrate material for the epitaxial growth of other III–V compound semiconductors including indium gallium arsenide (InGaAs), aluminum gallium arsenide (AlGaAs) etc. GaAs has a thermal conductivity of W cm −1 °C −1, which is about one . Gallium arsenide and gallium nitride are the two important gallium compounds. They are both used in the manufacture of optoelectronic devices (laser diodes, LEDs, photodetectors, and solar cells).   Book Review. M. Fujimoto (Editor). Gallium arsenide and related compounds Institute of Physics Conference Series 79 Proceedings of the Twelfth International Symposium on Gallium Arsenide and Related Compounds held in Karuizawa, Japan, 23–26 September Adam Hilger Ltd. Bristol and Boston , Seiten, zahlreiche Abbildungen und.